dmp2130l p-channel enhancem ent mode mosfet features ? low r ds(on) : ? 75 m @v gs = -4.5v ? 110 m @v gs = -2.7v ? 125 m @v gs = -2.5v ? low input/output leakage ? lead, halogen and antimony free, rohs compliant "green" device (notes 1, 2 and 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material - molded plas tic, ?green? molding compound. ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram below ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging DMP2130L-7 sot23 3000/tape & reel notes: 1. no purposefully added lead. halogen and antimony free. 2. product manufactured with green moldi ng compound and does not contain halogens or sb 2 o 3 fire retardants. marking information date code key year 2007 2008 2009 2010 2011 2012 code u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view internal schematic d g s top view mp1 = product type marking code ym = date code marking y = year (ex: u = 2007) m = month (ex: 9 = september) mp1 ym source gate drain product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -20 v gate-source voltage v gss 12 v drain current (note 5) continuous t a = 25c t a = 70c i d -3.0 -2.4 a pulsed drain current (note 6) i dm -15 a body-diode continuous current (note 5) i s 2.0 a thermal characteristics characteristic symbol value unit total power dissipation (note 5) p d 1.4 w thermal resistance, junction to ambient (note 5); steady-state r ja 90 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition static parameters drain-source breakdown voltage bv dss -20 ? ? v i d = -250 a, v gs = 0v zero gate voltage drain current t j = 25 c i dss ? ? -1 a v ds = -20v, v gs = 0v gate-body leakage current i gss ? ? 100 na v ds = 0v, v gs = 12v gate threshold voltage v gs ( th ) -0.6 ? -1.25 v v ds = v gs , i d = -250 a on state drain current (note 7) i d ( on ) -15 ? ? a v gs = -4.5v, v ds = -5v static drain-source on-resistance (note 7) r ds (on) ? 51 87 99 75 110 125 m v gs = -4.5v, i d = -3.5a v gs = -2.7v, i d = -3.0a v gs = -2.5v, i d = -2.6a forward transconductance (note 7) g fs ? 7.3 ? s v ds = -10v, i d = -3.0a diode forward voltage (note 7) v sd ? 0.79 -1.26 v i s = -1.7a, v gs = 0v maximum body-diode continuous current (note 5) i s ? ? 1.7 a ? dynamic parameters (note 8) total gate charge q g ? 7.3 ? nc v gs = -4.5v, v ds = -10v, i d = -3.0a gate-source charge q g s ? 2.0 ? nc v gs = -4.5v, v ds = -10v, i d = -3.0a gate-drain charge q g d ? 1.9 ? nc v gs = -4.5v, v ds = -10v, i d = -3.0a turn-on delay time t d ( on ) ? 12 ? ns v ds = -10v, v gs = -4.5v, r l = 10 , r g = 6 turn-on rise time t r ? 20 ? ns turn-off delay time t d ( off ) ? 38 ? ns turn-off fall time t f ? 41 ? ns input capacitance c iss ? 443 ? pf v ds = -16v, v gs = 0v f = 1.0mhz output capacitance c oss ? 128 ? pf reverse transfer capacitance c rss ? 101 ? pf notes: 3. device mounted on 1"x1", fr-4 pc board with 2 oz. copper and test pulse width t 10s. 4. repetitive rating, pulse widt h limited by junction temperature. 5. test pulse width t = 300 s. 6. guaranteed by design. not subject to production testing. dmp2130l product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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